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ifm OGE103, Through Beam Photoelectric Sensor, Barrel Sensor, 8 m Detection Range
Part Number : OGE103
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- Detailed Description
- Specifications
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25AA320A/25LC320A SPI Serial EEPROM
Microchip’s 25AA320A/25LC320A family of devices are 32 Kbit SPI Serial EEPROMs available in a variety of package, temperature and power supply variants.
The Serial Peripheral Interface (SPI) is utilised to provide the required Clock Input (SCK), Data In (SI) and Data Out (SO) signals. The operation of these devices can be paused via a Hold pin (HOLD) which causes inputs to be ignored with the exception higher priority interrupts defined via the Chip Select (CS) pin.
The Serial Peripheral Interface (SPI) is utilised to provide the required Clock Input (SCK), Data In (SI) and Data Out (SO) signals. The operation of these devices can be paused via a Hold pin (HOLD) which causes inputs to be ignored with the exception higher priority interrupts defined via the Chip Select (CS) pin.
Features
Max. Clock 10 MHz
Maximum write current 5 mA
Read current: 5 mA (typical)
Standby current: 5 μA (typical)
4096 x 8-bit Organization
32-Byte Page
Self-Timed Erase and Write Cycles, 5 ms (maximum)
Block Write Protection: Protect none, 1/4, 1/2 or all of array
Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch, Write-protect pin
Sequential Read
Endurance: >1,000,000 erase/write cycles
Data retention: >200 years
ESD protection: >4000V
Maximum write current 5 mA
Read current: 5 mA (typical)
Standby current: 5 μA (typical)
4096 x 8-bit Organization
32-Byte Page
Self-Timed Erase and Write Cycles, 5 ms (maximum)
Block Write Protection: Protect none, 1/4, 1/2 or all of array
Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch, Write-protect pin
Sequential Read
Endurance: >1,000,000 erase/write cycles
Data retention: >200 years
ESD protection: >4000V
The ifm electronic Through-beam sensor receiver is engineered for precision detection in various applications. This reliable device operates within a voltage range of 10 to 30 DC, drawing a mere 8 mA of current. Featuring a robust design with IP 67 protection and a threaded housing, it is suitable for use in demanding environments, capable of withstanding temperatures from -25°C to 60°C. The sensor employs red light for superior visibility, ensuring effective operation in diverse settings. With a maximum switching frequency of 1000 Hz and short-circuit protection, this sensor guarantees efficient performance, making it a vital component for automation and monitoring needs.
Operates within a wide voltage range for versatile integration
Designed for reliable functionality with a robust casing
Utilises red light for effective detection in various conditions
IP 67 rating allows for use in harsh environments
High switching frequency ensures rapid response times
Short circuit and overload protection enhance safety in operation
Compact design integrates seamlessly into tight spaces
MTTF rating of 1320 years for dependable longevity
Designed for reliable functionality with a robust casing
Utilises red light for effective detection in various conditions
IP 67 rating allows for use in harsh environments
High switching frequency ensures rapid response times
Short circuit and overload protection enhance safety in operation
Compact design integrates seamlessly into tight spaces
MTTF rating of 1320 years for dependable longevity
EEPROM Serial Access - Microchip
| Brand | ifm |
| Sensor Style | Barrel |
| Detection Type | Through Beam |
| Detection Range | 8 m |
| Output Type | NPN |
| Electrical Connection | M12 Connector |
| Switching Mode | Light Switching |
ifm OGE103, Through Beam Photoelectric Sensor, Barrel Sensor, 8 m Detection Range
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